Si4355
5. Controller Interface
5.1. Serial Peripheral Interface (SPI)
The Si4355 communicates with the host MCU over a standard 4-wire serial peripheral interface (SPI): SCLK, SDI,
SDO, and nSEL. The SPI interface is designed to operate at a maximum of 10 MHz. The SPI timing parameters
are listed in Table 10. The host MCU writes data over the SDI pin and can read data from the device on the SDO
output pin. Figure 7 shows an SPI write command. The nSEL pin should go low to initiate the SPI command. The
first byte of SDI data will be one of the API commands followed by n bytes of parameter data, which will be variable
depending on the specific command. The rising edges of SCLK should be aligned with the center of the SDI data.
Table 10. Serial Interface Timing Parameters
Symbol
t CH
t CL
t DS
Parameter
Clock high time
Clock low time
Data setup time
Min (ns)
40
40
20
SCLK
Diagram
t DH
Data hold time
20
t SS
t CL
t CH
t DS t DH
t DD
t SH
t DE
t DD
Output data delay
time
20
SDN
t EN
t DE
t SS
t SH
Output enable time
Output disable time
Select setup time
Select hold time
20
50
20
50
SDO
nSEL
t EN
t SW
t SW
nSEL
SDO
Select high period
80
SDI
API Command
ParamByte 0
ParamByte n
SCLK
Figure 7. SPI Write Command
The Si4355 contains an internal MCU which controls all the internal functions of the radio. For SPI read
commands, a typical communication flow of checking clear-to-send (CTS) is used to make sure the internal MCU
has executed the command and prepared the data to be output over the SDO pin. Figure 8 demonstrates the
general flow of an SPI read command. Once the CTS value reads FFh, the read data is ready to be clocked out to
the host MCU. The typical time for a valid FFh CTS reading is 20 μs. Figure 9 demonstrates the remaining read
cycle after CTS is set to FFh. The internal MCU will clock out the SDO data on the negative edge so the host MCU
should process the SDO data on the rising edge of SCLK.
Rev 1.0
19
相关PDF资料
SI4388DY-T1-GE3 MOSFET DUAL N-CH 30V 8-SOIC
SI4390DY-T1-GE3 MOSFET N-CH 30V 8.5A 8SOIC
SI4396DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4398DY-T1-GE3 MOSFET N-CH 20V 19A 8-SOIC
SI4404DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4406DY-T1-GE3 MOSFET N-CH D-S 30V 8-SOIC
SI4410DY MOSFET N-CH 30V 10A 8-SOIC
SI4411DY-T1-GE3 MOSFET P-CH D-S 30V 8-SOIC
相关代理商/技术参数
Si4355-B1A-FMR 功能描述:射频接收器 Si4355 EZRadio Rcvr RoHS:否 制造商:Skyworks Solutions, Inc. 类型:GPS Receiver 封装 / 箱体:QFN-24 工作频率:4.092 MHz 工作电源电压:3.3 V 封装:Reel
SI4355-B1A-GM 制造商:Silicon Laboratories Inc 功能描述:SI4355 EZRADIO RECEIVER - Bulk
SI4356ADY 制造商:VAISH 制造商全称:VAISH 功能描述:N-Channel 30-V (D-S) MOSFET
Si4356ADY-T1-E3 功能描述:MOSFET 30V 26A 6.5W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4356ADY-T1-GE3 功能描述:MOSFET 30V 26A 6.5W 5.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI4356-B1A-FM 制造商:Silicon Laboratories Inc 功能描述:SI4356 STANDALONE SUB-GHZ RECE 制造商:Silicon Laboratories Inc 功能描述:SI4356 STANDALONE SUB-GHZ RECEIVER - Rail/Tube 制造商:Silicon Laboratories Inc 功能描述:IC RX SUB-GHZ STAND ALONE QFN 制造商:Silicon Laboratories Inc 功能描述:RF Receiver Si4356 Standalone Sub-GHz Receiver
SI4356-B1A-FMR 制造商:Silicon Laboratories Inc 功能描述:SI4356 STANDALONE SUB-GHZ RECE 制造商:Silicon Laboratories Inc 功能描述:RECEIVER RF CI SMD - Tape and Reel 制造商:Silicon Laboratories Inc 功能描述:RF Receiver Si4356 Standalone Sub-GHz Receiver
SI4356DY 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 30-V MOSFET